Por favor, use este identificador para citar o enlazar este ítem: http://repositoriodigital.ipn.mx/handle/123456789/11592
Título : Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.
Palabras clave : SOLAR CELL
PHOTOACOUSTIC
Fecha de publicación : 16-ene-2013
Editorial : JOURNAL OF APPLIED PHYSICS
Descripción : In this work we study the influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films on glass substrates, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures, where the CdTe layer was grown on the CdS thin film by close space vapor deposition CSVT -hot wall technique. The interface recombination velocity was measured by means of the photoacoustic PA technique in a heat transmission configuration, in which minority carriers are photoexcited at the CdTe layer after illumination through the substrate and the CdS thin film. For data processing, a theoretical model was developed for the generation of the PA signal. We show a reduction in the value of the recombination velocity respecting those obtained for samples where CdS was grown by CSVT, and we observe that a minimal value appears for a thiourea/CdCl2 ratio in the CdS deposition solution equal to 5. These results show a good correlation with those of electrical measurements performed in solar cell devices.
INSTITUTO POLITECNICO NACIONAL, CONACYT
URI : http://www.repositoriodigital.ipn.mx/handle/123456789/11592
Otros identificadores : doi:10.1063/1.3431534
http://hdl.handle.net/123456789/1129
Aparece en las colecciones: Doctorado

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