Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

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Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Rojas López, Marlon	-
dc.date.accessioned	2012-12-18T02:24:54Z	-
dc.date.available	2012-12-18T02:24:54Z	-
dc.date.issued	2012-12-17	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/9097	-
dc.description	Article	es
dc.description.abstract	X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuKa radiation. XRD analysis reveals that deposited films below 335 C, assumed the zinc blend structure. Samples annealed at above 335 C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be w 32 nm using the Scherrer formula. 2009 Elsevier Ltd. All rights reserved.	es
dc.description.sponsorship	Instituto Politécnico Nacional CIBA Tlaxcala	es
dc.language.iso	en	es
dc.subject	Sputtering	es
dc.title	Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering	es
dc.type	Article	es
dc.description.especialidad	Medico-Biológicas	es
dc.description.tipo	PDF	es
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