Por favor, use este identificador para citar o enlazar este ítem: http://repositoriodigital.ipn.mx/handle/123456789/10828
Título : Internal electric-field and segregation effects on luminescence properties
Palabras clave : Quantum wells
Fecha de publicación : 16-ene-2013
Editorial : Journal of Applied Physics
Descripción : Surface segregation of In atoms during molecular-beam epitaxy and its influence on the energy levels in strained piezoelectric InGaAs/GaAs and InGaN/GaN quantum wells QWs are investigated theoretically. It is shown that these effects modify the electronic states in the QW and the emission energy in the photoluminescence PL spectra. In this work, we solve analytically the Schrödinger equation in the absence of electric field, taking into account the shape changes in the QWs due to the segregation of In atoms during the growth process of the semiconductor heterostructures. Furthermore, the influence of the built-in electric field due to the piezoelectric effect on the PL emission is calculated by considering a variational electron wave function to calculate the ground-energy transitions inside the active region in the heterostructure. In particular, we apply this model to the case of indium segregation in InGaAs/GaAs for moderate internal electric fields. The transition energy calculations between the confined electron and hole states as a function of the well width for different temperatures and In composition are in agreement with the measured PL energy peaks.
Research article of journal indexed in ISI database
Instituto Politecnico Nacional and CONACYT-Mexico
URI : http://www.repositoriodigital.ipn.mx/handle/123456789/10828
Otros identificadores : 0021-8979
Aparece en las colecciones: Doctorado

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