El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/10861| Título : | Effect of giant electric fields on the optical properties of GaN quantum wells |
| Palabras clave : | GaN quantum wells Optical properties |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | Revista Mexicana de Fisica |
| Descripción : | Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect
modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields
induce a reduction in the oscillator strength of the transition energy between the confined electron and hole states in GaN/AlxGa1¡xN QWs,
and dramatically increase the carrier lifetime as the QW thickness increases. In this work, we solve analytically the Schr¨odinger equation for
moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large
redshifts of the PL energy position and the spatial separation of the electrons and holes several greater times than the Bohr radius caused by
the strong piezoelectric fields are explained using a triangular potential, instead of a square one, in the Schr¨odinger equation. The transition
energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement
with the measured photoluminescence energy peaks. Research article of journal indexed in ISI database Instituto Politecnico Nacional and CONACYT |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/10861 |
| Otros identificadores : | 0035-001X http://hdl.handle.net/123456789/377 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| 2007 RMF-v54-p303-306.pdf | 842.66 kB | Adobe PDF | Visualizar/Abrir |
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