Nitrogen incorporation in Al2O3 thin films prepared by pulsed ultrasonic sprayed pyrolysis

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Título :	Nitrogen incorporation in Al2O3 thin films prepared by pulsed ultrasonic sprayed pyrolysis
Palabras clave :	Spray Pyrolysis Al2O3 XPS SIMS
Fecha de publicación :	16-ene-2013
Editorial :	THE ELECTROCHEMICAL SOCIETY
Descripción :	The electrical characteristics and the chemical composition profiles determined by XPS and SIMS for aluminum oxide thin films deposited by pulsed ultrasonic spray pyrolysis are reported. The films were deposited on c-Si at 550 ºC using a chemical solution of aluminum acetylacetonate as source of aluminum and N,NDimethylformamide as solvent, in addition a H2O-NH4OH mist was supplied simultaneously during deposition to improve the overall properties of these films. The results show that there is nitrogen incorporation in the films at the interface with the Si substrate. There is also a clear migration of silicon into the deposited film. The thickness of the films was in the range of 30 nm. Infrared spectroscopy also shows the presence of Si-O bonds. The dielectric constant for these films was higher than 8 and their interface trap density at midgap was in the 1010 eV-1cm-2 range. Investigación INSTITUTO POLITECNICO NACIONAL
URI :	http://www.repositoriodigital.ipn.mx/handle/123456789/11256
Otros identificadores :	ECS Transactions, 25 (6) 179-186 (2009) 1938-6737 http://hdl.handle.net/123456789/772
Aparece en las colecciones:	Doctorado

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