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dc.creatorMARIN, E.-
dc.creatorSANTOYO, J.-
dc.creatorVIGIL, O.-
dc.creatorCALDERON, A.-
dc.creatorCONTRERAS, G.-
dc.date2012-03-29T16:02:11Z-
dc.date2012-03-29T16:02:11Z-
dc.date2010-06-
dc.date.accessioned2013-01-16T16:17:41Z-
dc.date.available2013-01-16T16:17:41Z-
dc.date.issued2013-01-16-
dc.identifierdoi:10.1063/1.3431534-
dc.identifierhttp://hdl.handle.net/123456789/1129-
dc.identifier.urihttp://www.repositoriodigital.ipn.mx/handle/123456789/11592-
dc.descriptionIn this work we study the influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films on glass substrates, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures, where the CdTe layer was grown on the CdS thin film by close space vapor deposition CSVT -hot wall technique. The interface recombination velocity was measured by means of the photoacoustic PA technique in a heat transmission configuration, in which minority carriers are photoexcited at the CdTe layer after illumination through the substrate and the CdS thin film. For data processing, a theoretical model was developed for the generation of the PA signal. We show a reduction in the value of the recombination velocity respecting those obtained for samples where CdS was grown by CSVT, and we observe that a minimal value appears for a thiourea/CdCl2 ratio in the CdS deposition solution equal to 5. These results show a good correlation with those of electrical measurements performed in solar cell devices.-
dc.descriptionINSTITUTO POLITECNICO NACIONAL, CONACYT-
dc.languageen-
dc.publisherJOURNAL OF APPLIED PHYSICS-
dc.subjectSOLAR CELL-
dc.subjectPHOTOACOUSTIC-
dc.titleInfluence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.-
dc.typeArticle-
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