Characterization of semiconductors using photoacoustics

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Campo DC	Valor	Lengua/Idioma
dc.creator	MARIN, E.	-
dc.creator	RIECH, I.	-
dc.creator	CALDERON, A.	-
dc.date	2012-03-29T16:38:45Z	-
dc.date	2012-03-29T16:38:45Z	-
dc.date	2009	-
dc.date.accessioned	2013-01-16T16:24:46Z	-
dc.date.available	2013-01-16T16:24:46Z	-
dc.date.issued	2013-01-16	-
dc.identifier	978-81-7895-401-1	-
dc.identifier	http://hdl.handle.net/123456789/1152	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/11620	-
dc.description	Since the early seventies, photoacoustic has been emerged as a well suited technique for the measurement of optical and transport properties of semiconductors, showing in many cases considerable advantages respecting other characterization methods. As these materials are often grown in the form of thin films on different kind of substrates, in this chapter we shall describe some of the theoretical models devised in the last years to the measurement of their electronic transport properties. We will also show how photoacoustic spectroscopy allows the measurement of the wavelength dependence of the optical absorption coefficient of very opaque semiconductor thin layers.	-
dc.description	INSTITUTO POLITECNICO NACIONAL, CONACYT	-
dc.language	en	-
dc.publisher	Thermal Wave Physics and Related Photothermal Techniques: Basic Principles and Recent Developments, TRANSWORLD RESEARCH	-
dc.subject	SEMICONDUCTORS	-
dc.subject	PHOTOACOUSTIC	-
dc.title	Characterization of semiconductors using photoacoustics	-
dc.type	Book chapter	-
Aparece en las colecciones:	Doctorado

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