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http://repositoriodigital.ipn.mx/handle/123456789/11633Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | ALARCON-FLORES, GILBERTO | - |
| dc.creator | AGUILAR-FRUTIS, MIGUEL. A | - |
| dc.creator | FALCONY- GUAJARDO, CIRO | - |
| dc.creator | ARAIZA-IBARRA, J.J | - |
| dc.creator | HERRERA-SUAREZ, H.J | - |
| dc.date | 2012-03-29T17:22:59Z | - |
| dc.date | 2012-03-29T17:22:59Z | - |
| dc.date | 2006-07-06 | - |
| dc.date.accessioned | 2013-01-16T16:28:17Z | - |
| dc.date.available | 2013-01-16T16:28:17Z | - |
| dc.date.issued | 2013-01-16 | - |
| dc.identifier | J. Vac. Sci. Technol. B 24 (4) Jul/Aug 2006 | - |
| dc.identifier | 1071-1023 | - |
| dc.identifier | http://hdl.handle.net/123456789/1159 | - |
| dc.identifier.uri | http://www.repositoriodigital.ipn.mx/handle/123456789/11633 | - |
| dc.description | Y2O3 films were deposited on c-Si substrates at temperatures in the 400–550 °C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O–NH4OH was sprayed in parallel during the deposition process to improve the optical, structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density values as low as 1010 eV−1 cm−2. An effective refractive index value of 1.86, and deposition rates close to 1 Å/ s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the 400 direction normal to the Si surface. An effective dielectric constant up to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for 1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure. | - |
| dc.description | INVESTIGACION | - |
| dc.description | INSTITUTO POLITECNICO NACIONAL | - |
| dc.language | en | - |
| dc.publisher | American Vacuum Society | - |
| dc.subject | Y2O3 THIN FILMS | - |
| dc.subject | SPRAY PYROLYSIS | - |
| dc.title | Low interface states and high dielectric constant Y2O3 films on Si substrates | - |
| dc.type | Article | - |
| Aparece en las colecciones: | Doctorado | |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| LOW INTERFACE AND HIGH DIELECTRIC CONSTANT Y203 FILMS ON Si SUBSTRATES.pdf | 35.15 kB | Adobe PDF | Visualizar/Abrir |
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