Ohmic contacts  with  palladium  diffusion  barrier on III-V semiconductors

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Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Diaz Reyes, Joel	-
dc.date.accessioned	2012-11-27T18:11:32Z	-
dc.date.available	2012-11-27T18:11:32Z	-
dc.date.issued	2012-11-27	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/8595	-
dc.description	article	es
dc.description.abstract	Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the deposited Pd fi l ms by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the meta l-semiconductor st r uctures demonstrates the capability of the Pd .films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM ).	es
dc.description.sponsorship	Instituto Politécnico Nacional CIBA-TLAXCLA	es
dc.language.iso	en	es
dc.subject	Ohmic contacts Diffusion barriers Palladium 111-V semiconductors GaAs SIMS Transmission line method {TLM )	es
dc.title	Ohmic contacts with palladium diffusion barrier on III-V semiconductors	es
dc.type	Article	es
dc.description.especialidad	Medico-Biológicas	es
dc.description.tipo	pdf	es
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