Por favor, use este identificador para citar o enlazar este ítem: http://repositoriodigital.ipn.mx/handle/123456789/8560
Título : Raman studies of aluminum induced microcrystallization of nq Si:H films produced by PECVD
Palabras clave : Raman scattering
Amorphous materials
Fecha de publicación : 26-nov-2012
Resumen : We performed a Raman scattering study of aluminum induced microcrystallization of thin films of phosphorous-doped hydrogenated amorphous silicon (nq a-Si:H).These thin films of heavily doped nq a-Si:H were prepared by plasma enhanced chemical vapor deposition.Afterwar ds, aluminum was deposited and followed by an annealing process at 523 K in a nitrogen environment during several hours.Raman results reveal the formation of microcrystalline regions distributed in the amorphous matrix, induced by the film annealing in the presence of the aluminum.W e have used the spatial correlation model to estimate from the Raman signal the microcrystallite size and its relation with the annealing time.The estimated crystallite size was found to be between 6.8 and 9.5 nm and the broadening and downshift of the signals are explained in terms of the crystallite size and lattice expansion effects due to the annealing process.Conductivity values of the samples as a function of the annealing time are explained in terms of the contributions from the amorphous and from the microcrystalline phases. 2003 Elsevier B.V. All rights reserved.
Descripción : Article
URI : http://www.repositoriodigital.ipn.mx/handle/123456789/8560
Aparece en las colecciones: Artículos

Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
2003_Thin_Solid_Films_Silicio.pdf53.21 kBAdobe PDFVisualizar/Abrir

Los ítems de DSpace están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.