Structural  characterization by HRXRD and Raman scattering of AlxGa1_ xSb/GaSb heterostructure

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dc.contributor.author	Diaz Reyes, Joel	-
dc.date.accessioned	2012-11-27T18:25:56Z	-
dc.date.available	2012-11-27T18:25:56Z	-
dc.date.issued	2012-11-27	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/8602	-
dc.description	article	es
dc.description.abstract	- High resolution X-ray diffraction profiles were obtained from Al,Ga 1 .,Sb layers grown on (00 l) GaSb substrates by Liquid Phase Epitaxy (LPE). The out of plane lattice parameter was estimated directly from the asymmetrical diffractions (115) and (-1-15) alloy. These results show that some of the layers are more strained than others. The out of plane lattice parameter as a function of AI content is higher than the corresponding bulk lattice parameter of Al,Ga 1 _,Sb layers obtained with Vegard's law. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like ts discussed.	es
dc.description.sponsorship	Instituto Politécnico Nacional CIBA-TLAXCLA	es
dc.language.iso	en	es
dc.subject	Ternary alloy; Liquid phase epitaxy; X-ray diffraction; Raman Scattering; A!GaSb;	es
dc.title	Structural characterization by HRXRD and Raman scattering of AlxGa1_ xSb/GaSb heterostructure	es
dc.type	Article	es
dc.description.especialidad	Medico-Biológicas	es
dc.description.tipo	pdf	es
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