Low Temperature Operation of a Microbolometer Array for Terahertz Detection

Abstract

In this work we present the design and characterization of a microbolometer array for detection of radiation in the 0.7-1.5 THz frequency range. Our study shows that the microbolometer array can operate from 77 to 350 K. The sensing film is made of a boron-doped hydrogenated amorphous silicon film, which was deposited on a cavity-suspended silicon nitride membrane forming a 5x5 array. We obtained a higher temperature coefficient of resistance (TCR) than those values reported in the literature. The current–voltage characteristics present an ohmic behaviour.