Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy

Abstract

Fully strained single-crystal Ge 1 -xSnx alloys (xo;;;0.22) deposited on Ge(001)2 X 1 by low-temperature molecular beam epitaxy have been studied by Raman scattering. The results are characterized by a Ge-Ge longitudinal optical (LO) phonon line, which shifts to lower frequencies with increasing x. Samples capped with a 200-A-thick Ge layer exhibit a second Ge-Ge LO phonon line whose position remains close to that expected from bulk Ge. For all samples, capped and uncapped, the frequency shift AwGesn of the Ge-Ge LO phonon line from the Ge 1 -xSnx layer, with respect to the position for bulk Ge, is linear with the Sn fraction x ( AwGeSn = - 76.8x em -I) over the entire composition range. Using the elastic constants, the Griineisen parameter, and the shear phonon deformation parameter for Ge, we calculate the contribution of compressive strain to the

total frequency shift to be Awstrain=63.8x cm- 1• Thus, the LO phonon shift in Ge

-xSnx due to

substitutional-Sn-induced bond stretching in fully relaxed alloys is estimated to be Awbond = -140.6x cm- 1 • © 1998 American Institute of Physics.